In an n-p-n transistor

Question

In an n-p-n transistor (A) the emitter has higher degree of doping compared to that of the collector (B) the collector has higher degree of doping compared to that of the emitter (C) both the emitter and collector have same degree of doping (D) the base region is most heavily doped

Tardigrade Admin · Accepted Answer

In an n-p-n or p-n-p transistor, the left hand side thick layer of the transistor is heavily doped known as emitter and right hand side thick layer of the transistor is moderately doped known as collector.

Q. In an n-p-n transistor

the emitter has higher degree of doping compared to that of the collector

the collector has higher degree of doping compared to that of the emitter

both the emitter and collector have same degree of doping

the base region is most heavily doped

In an $n - p - n$ or $p - n - p$ transistor, the left hand side thick layer of the transistor is heavily doped known as emitter and right hand side thick layer of the transistor is moderately doped known as collector.

Q. In an n-p-n transistor

the emitter has higher degree of doping compared to that of the collector

the collector has higher degree of doping compared to that of the emitter

both the emitter and collector have same degree of doping

the base region is most heavily doped

In an n−p−n or p−n−p transistor, the left hand side thick layer of the transistor is heavily doped known as emitter and right hand side thick layer of the transistor is moderately doped known as collector.

In an $n - p - n$ or $p - n - p$ transistor, the left hand side thick layer of the transistor is heavily doped known as emitter and right hand side thick layer of the transistor is moderately doped known as collector.