Question

In an n-p-n transistor

• A. the emitter has higher degree of doping compared to that of the collector
• B. the collector has higher degree of doping compared to that of the emitter
• C. both the emitter and collector have same degree of doping
• D. the base region is most heavily doped

Answer 1

Answer: (A)

In an $n-p-n$ or $p-n-p$ transistor, the left hand side thick layer of the transistor is heavily doped known as emitter and right hand side thick layer of the transistor is moderately doped known as collector.