In a P-n junction diode, the thickness of depletion layer is 2× 10- 6m and barrier potential is 0.3v. The Intensity of the electric field at the junction is - -

Question

In a P-n junction diode, the thickness of depletion layer is 2× 10- 6m and barrier potential is 0.3v. The Intensity of the electric field at the junction is - - (A) 0.6× 10- 6v/m from n to p side (B) 0.6× 10- 6v/m from p to n side (C) 1.5× 105v/m from n to p side (D) 1.5× 105v/m from p to n side

Tardigrade Admin · Accepted Answer

E=(vB/d)=(0 . 3/2 × 10- 6)=1.5× 105v/m Always from n to p side

Q. In a $P - n$ junction diode, the thickness of depletion layer is $2 \times 1 0^{- 6} m$ and barrier potential is $0.3 v .$ The Intensity of the electric field at the junction is - -

$0.6 \times 1 0^{- 6} v / m$ from $n$ to $p$ side

$0.6 \times 1 0^{- 6} v / m$ from $p$ to $n$ side

$1.5 \times 1 0^{5} v / m$ from $n$ to $p$ side

$1.5 \times 1 0^{5} v / m$ from $p$ to $n$ side

$E = \frac{v _{B}}{d} = \frac{0.3}{2 \times 1 0 ^{- 6}} = 1.5 \times 1 0^{5} v / m$
Always from $n$ to $p$ side

Q. In a P−n junction diode, the thickness of depletion layer is 2×10−6m and barrier potential is 0.3v. The Intensity of the electric field at the junction is - -

0.6×10−6v/m from n to p side

0.6×10−6v/m from p to n side

1.5×105v/m from n to p side

1.5×105v/m from p to n side