Question

In a $P-n$ junction diode, the thickness of depletion layer is $2\times 10^{- 6}m$ and barrier potential is $0.3v.$ The Intensity of the electric field at the junction is - -

• A. $0.6\times 10^{- 6}v/m$ from $n$ to $p$ side
• B. $0.6\times 10^{- 6}v/m$ from $p$ to $n$ side
• C. $1.5\times 10^{5}v/m$ from $n$ to $p$ side
• D. $1.5\times 10^{5}v/m$ from $p$ to $n$ side

Answer 1

Answer: (C)

$E=\frac{v_{B}}{d}=\frac{0 . 3}{2 \times 10^{- 6}}=1.5\times 10^{5}v/m$
Always from $n$ to $p$ side