Assertion The energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason Thermal energy produces fewer minority carriers in silicon than in germanium.

Question

Assertion The energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason Thermal energy produces fewer minority carriers in silicon than in germanium. (A) Both assertion and reason are true and reason is the correct explanation of assertion (B) Both assertion and reason are true but reason is not the correct explanation of assertion (C) Assertion is true but reason is false (D) Both assertion and reason are fals

Tardigrade Admin · Accepted Answer

The energy gap between valence band and conduction band in germanium is 0.76 eV and the energy gap between valence band and conduction band in silicon is 1.1 eV Also, it is true that thermal energy produces fewer minority carriers in silicon than in germanium.

Q. Assertion The energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason Thermal energy produces fewer minority carriers in silicon than in germanium.

Both assertion and reason are true and reason is the correct explanation of assertion

Both assertion and reason are true but reason is not the correct explanation of assertion

Assertion is true but reason is false

Both assertion and reason are fals

The energy gap between valence band and conduction band in germanium is 0.76 eV and the energy gap between valence band and conduction band in silicon is 1.1 eV Also, it is true that thermal energy produces fewer minority carriers in silicon than in germanium.

Q. Assertion The energy gap between the valence band and conduction band is greater in silicon than in germanium.
Reason Thermal energy produces fewer minority carriers in silicon than in germanium.