1. Tardigrade
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  3. Physics
  4. Assertion The energy gap between the valence band and conduction band is greater in silicon than in germanium. Reason Thermal energy produces fewer minority carriers in silicon than in germanium.

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Q. Assertion The energy gap between the valence band and conduction band is greater in silicon than in germanium.
Reason Thermal energy produces fewer minority carriers in silicon than in germanium.

Semiconductor Electronics: Materials Devices and Simple Circuits

Solution:

The energy gap between valence band and conduction band in germanium is 0.76 eV and the energy gap between valence band and conduction band in silicon is 1.1 eV Also, it is true that thermal energy produces fewer minority carriers in silicon than in germanium.