A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5eV . It can detect a signal of wavelength,

Question

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5eV . It can detect a signal of wavelength, (A) 4000 overset° A (B) 6000 overset° A (C) 4000nm (D) 6000nm

Tardigrade Admin · Accepted Answer

(λ )max=(12400/Δ Eg)=(12400/2 . 5 eV)(eV â«) λ max=4960â« λ < λ max λ =4000â«

Q. A $p - n$ photodiode is fabricated from a semiconductor with a band gap of $2.5 e V$ . It can detect a signal of wavelength,

$4000 A^{\circ}$

$6000 A^{\circ}$

$4000 nm$

$6000 nm$

$(λ)_{ma x} = \frac{12400}{Δ E _{g}} = \frac{12400}{2.5 e V} (e V Å)$
$λ_{ma x} = 4960Å$
$λ < λ_{ma x}$
$λ = 4000Å$

Q. A p−n photodiode is fabricated from a semiconductor with a band gap of 2.5eV . It can detect a signal of wavelength,

4000A∘

6000A∘

4000nm

6000nm