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  4. A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5eV . It can detect a signal of wavelength,

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Q. A $p-n$ photodiode is fabricated from a semiconductor with a band gap of $2.5eV$ . It can detect a signal of wavelength,

NTA AbhyasNTA Abhyas 2020

Solution:

$\left(\lambda \right)_{max}=\frac{12400}{\Delta E_{g}}=\frac{12400}{2 . 5 eV}\left(eV Å\right)$
$\lambda _{max}=4960Å$
$\lambda < \lambda _{max}$
$\lambda =4000Å$