A p-n junction photodiode is fabricated from a semiconductor with a band gap of 2.8 eV. It can detect a wavelength nearing to

Question

A p-n junction photodiode is fabricated from a semiconductor with a band gap of 2.8 eV. It can detect a wavelength nearing to (A) 5200 mathringA (B) 4400 mathringA (C) 6200 mathringA (D) 7500 mathringA

Tardigrade Admin · Accepted Answer

As, we know that wavelength λ=(h c/Eg)=(1240 eV - nm /2.8 eV )=440 nm ≈ 4400 mathringA

Q. A $p$ -n junction photodiode is fabricated from a semiconductor with a band gap of $2.8 e V$ . It can detect a wavelength nearing to

$5200 \overset{˚}{A}$

$4400 \overset{˚}{A}$

$6200 \overset{˚}{A}$

$7500 \overset{˚}{A}$

As, we know that wavelength
$λ = \frac{h c}{E _{g}} = \frac{1240 e V - nm}{2.8 e V} = 440 nm \approx 4400 \overset{˚}{A}$

Q. A p-n junction photodiode is fabricated from a semiconductor with a band gap of 2.8eV. It can detect a wavelength nearing to

5200A˚

4400A˚

6200A˚

7500A˚