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  4. A p-n junction photodiode is fabricated from a semiconductor with a band gap of 2.8 eV. It can detect a wavelength nearing to

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Q. A $p$-n junction photodiode is fabricated from a semiconductor with a band gap of $2.8 \,eV$. It can detect a wavelength nearing to

Semiconductor Electronics: Materials Devices and Simple Circuits

Solution:

As, we know that wavelength
$\lambda=\frac{h c}{E_{g}}=\frac{1240\, eV - nm }{2.8 eV }=440 \,nm \approx 4400 \,\mathring{A}$