Two junction diodes one of germanium (Ge) and other of silicon (Si) are connected as shown in figure to a battery of emf 12 V and a load resistance 10 k Ω. The germanium diode conducts at 0.3 V and silicon diode at 0.7 V. When a current flows in the circuit, then the potential of terminal Y will be

Question

Two junction diodes one of germanium (Ge) and other of silicon (Si) are connected as shown in figure to a battery of emf 12 V and a load resistance 10 k Ω. The germanium diode conducts at 0.3 V and silicon diode at 0.7 V. When a current flows in the circuit, then the potential of terminal Y will be (A) 12 V (B) 11 V (C) 11.3 V (D) 11.7 V

Tardigrade Admin · Accepted Answer

Ge conducts at 0.3 V and S i Conducts at 0.7 V. Both Ge and Si are connected in parallel. When current begins to flow, then the potential difference remains at 0.3 V, so no current flows through Si-diode. ∴ Potential difference across resistive load =12-0.3=11.7 V ∴ Potential of Y=11.7 V

Q. Two junction diodes one of germanium (Ge) and other of silicon (Si) are connected as shown in figure to a battery of emf 12V and a load resistance 10kΩ. The germanium diode conducts at 0.3V and silicon diode at 0.7V. When a current flows in the circuit, then the potential of terminal Y will be

12 V

11 V

11.3 V

11.7 V

Ge conducts at 0.3V and Si Conducts at 0.7V. Both Ge and Si are connected in parallel. When current begins to flow, then the potential difference remains at 0.3V, so no current flows through Si-diode. ∴ Potential difference across resistive load =12−0.3=11.7V ∴ Potential of Y=11.7V