Question

The reverse saturation of $p-n$ diode

• A. depends on doping concentrations
• B. depends on diffusion lengths of carriers
• C. depends on the doping concentrations and diffusion lengths
• D. depends on the doping concentrations, diffusion length and device temperature

Answer 1

Answer: (D)

The reverse saturation of $p-n$ diode depends on the doping concentrations, diffusion length and device temperature.