Depletion layer is formed due to diffusion of electrons from n-side to p-side. There they combine with holes of p-side.
In a p−n junction, there are no free charges in depletion region. It contains only bound charges. Width of depletion
region is inversely proportional to dopant concentration. So, it may have different width in p and n-sides. Due to diffusion of electrons, p-side is negatively charged and n-side is positively charged.