The electron density of intrinsic semi-conductor at room temperature is 1016 m-3. When doped with a trivalent impurity, the electron density is decreased to 1014 m-3 at the same temperature. The majority carrier density is

Question

The electron density of intrinsic semi-conductor at room temperature is 1016 m-3. When doped with a trivalent impurity, the electron density is decreased to 1014 m-3 at the same temperature. The majority carrier density is (A) 1016m-3 (B) 1018n-3 (C) 1021m-3 (D) 1020m-3

Tardigrade Admin · Accepted Answer

ne × nh=ni2 ni=1016 m -3 ne=1014 m -3 given ⇒ nh=(ni2/ne)=((1016)2/1014)=(1032/1014) =1018 m -3 Given semiconductor is doped with a trivalent impurity, therefore majority charge carriers are holes.

Q. The electron density of intrinsic semi-conductor at room temperature is $1 0^{16} m^{- 3}$ . When doped with a trivalent impurity, the electron density is decreased to $1 0^{14} m^{- 3}$ at the same temperature. The majority carrier density is

$1 0^{16} m^{- 3}$

$1 0^{18} n^{- 3}$

$1 0^{21} m^{- 3}$

$1 0^{20} m^{- 3}$

$1 0^{19} m^{- 3}$

Q. The electron density of intrinsic semi-conductor at room temperature is 1016m−3. When doped with a trivalent impurity, the electron density is decreased to 1014m−3 at the same temperature. The majority carrier density is

1016m−3

1018n−3

1021m−3

1020m−3

1019m−3