The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junction are

Question

The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p-n junction are (A) drift in forward bias, diffusion in reverse bias (B) diffusion in forward bias, drift in reverse bias (C) diffusion in both forward and reverse bias (D) drift in both forward and reverse bias

Tardigrade Admin · Accepted Answer

In p-n junction, the diffusion of majority carriers takes place when junction is forward biased and drifting of minority carriers takes place across the junction, when it is reverse biased.

Q. The dominant mechanism for motion of charge carriers in forward and reverse biased silicon $p - n$ junction are

drift in forward bias, diffusion in reverse bias

diffusion in forward bias, drift in reverse bias

diffusion in both forward and reverse bias

drift in both forward and reverse bias

In $p - n$ junction, the diffusion of majority carriers takes place when junction is forward biased and drifting of minority carriers takes place across the junction, when it is reverse biased.

Q. The dominant mechanism for motion of charge carriers in forward and reverse biased silicon p−n junction are