In forward biasing, the forward bias voltage opposes the potential barrier VB .
Due to it, the potential barrier is considerably reduced, the depletion region becomes thin, the potential barrier is much reduced and at some forward voltage ( 0.1 to 0.3V ), it is eliminated altogether.
Since, the small increase in forward voltage shows the large increase in forward current, hence the resistance of p−n junction is low to the flow of current when forward biased.