1. Tardigrade
  2. Question
  3. Physics
  4. In a forward biased P N -junction diode, the potential barrier in the depletion region is of the form

Q. In a forward biased -junction diode, the potential barrier in the depletion region is of the form

 1798  268 Semiconductor Electronics: Materials Devices and Simple Circuits Report Error

Solution:

Potential across the junction varies symmetrically and linearly, having side negative and side positive.