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  4. In a forward biased P N -junction diode, the potential barrier in the depletion region is of the form

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Q. In a forward biased $P N$ -junction diode, the potential barrier in the depletion region is of the form

Semiconductor Electronics: Materials Devices and Simple Circuits

Solution:

Potential across the $P N$ junction varies symmetrically and linearly, having $P$ side negative and $N$ side positive.