If a semiconductor has an intrinsic carrier concentration of 1.41 × 1016 /m3 , when doped with 1021 /m3 phosphorous atoms, then the concentration of holes/ m3 at room temperature will be

Question

If a semiconductor has an intrinsic carrier concentration of 1.41 × 1016 /m3 , when doped with 1021 /m3 phosphorous atoms, then the concentration of holes/ m3 at room temperature will be (A)  2 × 1021  (B)  2 × 1011  (C)  1.41 × 1010  (D)  1.41 × 1016

Tardigrade Admin · Accepted Answer

Doping will increase the number of electrons only and not the holes. So, number of holes will be equal to number of intrinsic carrier concentration. =1.41 × 1016 / m 3

Q. If a semiconductor has an intrinsic carrier concentration of $1.41 \times 1 0^{16} / m^{3}$ , when doped with $1 0^{21} / m^{3}$ phosphorous atoms, then the concentration of holes/ $m^{3}$ at room temperature will be

$2 \times 1 0^{21}$

$2 \times 1 0^{11}$

$1.41 \times 1 0^{10}$

$1.41 \times 1 0^{16}$

Doping will increase the number of electrons only and not the holes. So, number of holes will be equal to number of intrinsic carrier concentration.
$= 1.41 \times 1 0^{16} / m^{3}$

Q. If a semiconductor has an intrinsic carrier concentration of 1.41×1016/m3 , when doped with 1021/m3 phosphorous atoms, then the concentration of holes/ m3 at room temperature will be

2×1021

2×1011

1.41×1010

1.41×1016