Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by: (assume that the Ge diode has large breakdown voltage)

Question

Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by: (assume that the Ge diode has large breakdown voltage) (A) 0.6 V (B) 0.8 V (C) 0.4 V (D) 0.2 V

Tardigrade Admin · Accepted Answer

Initially Ge Si are both forward biased so current will effectivily pass through Ge diode with a drop of 0.3 V if ''Ge'' is revesed then current will flow through ''Si'' diode hence an effective drop of (0.7 - 0.3) = 0.4 V is observed.

Q. $G e$ and $S i$ diodes start conducting at $0.3 V$ and $0.7 V$ respectively. In the following figure if Ge diode connection are reversed, the value of $V_{o}$ changes by : (assume that the Ge diode has large breakdown voltage)

$0.6 V$

$0.8 V$

$0.4 V$

$0.2 V$

Initially $G e$ & $S i$ are both forward biased so current will effectivily pass through $G e$ diode with a drop of $0.3 V$
if $^{''} G e^{''}$ is revesed then current will flow through $^{''} S i^{''}$ diode hence an effective drop of $(0.7 - 0.3) = 0.4 V$ is observed.

Q. Ge and Si diodes start conducting at 0.3V and 0.7V respectively. In the following figure if Ge diode connection are reversed, the value of Vo​ changes by : (assume that the Ge diode has large breakdown voltage)

0.6V

0.8V

0.4V

0.2V