For transistor action, which of the following statements is correct ?

Question

For transistor action, which of the following statements is correct ? (A) Base, emitter and collector regions should have same doping concentrations. (B) Base, emitter and collector regions should have same size. (C) Both emitter junction as well as the collector junction are forward biased. (D) The base region must be very thin and lightly doped.

Tardigrade Admin · Accepted Answer

<img class="img-fluid question-image" alt="image" src="https://cdn.tardigrade.in/img/question/physics/4f278cc9beb133f1e551d7e1d686bab4-.png" /> For Bi-polar junction transistor, Length profile is LC> LE> LB and doping profile is E> C> B

Q. For transistor action, which of the following statements is correct ?

Base, emitter and collector regions should have same doping concentrations.

Base, emitter and collector regions should have same size.

Both emitter junction as well as the collector junction are forward biased.

The base region must be very thin and lightly doped.

For Bi-polar junction transistor,
Length profile is $L_{C} > L_{E} > L_{B}$
and doping profile is $E > C > B$

Q. For transistor action, which of the following statements is correct ?

Base, emitter and collector regions should have same doping concentrations.

Base, emitter and collector regions should have same size.

Both emitter junction as well as the collector junction are forward biased.

The base region must be very thin and lightly doped.

For Bi-polar junction transistor, Length profile is LC​>LE​>LB​ and doping profile is E>C>B

For Bi-polar junction transistor,
Length profile is $L_{C} > L_{E} > L_{B}$
and doping profile is $E > C > B$