For a silicon base transistor, VC E must be sufficiently larger than

Question

For a silicon base transistor, VC E must be sufficiently larger than (A) 21 V (B) 0.7 V (C) 0.1 V (D) 20 V

Tardigrade Admin · Accepted Answer

Note that drift velocity in semiconductors is affected by an increase in temperature in the same way as in metals, i.e., reduced due to an increase in the number of collisions with the lattice ions, which vibrate with greater amplitude at a higher temperature.

Q. For a silicon base transistor, VCE​ must be sufficiently larger than

21 V

0.7 V

0.1 V

20 V

Note that drift velocity in semiconductors is affected by an increase in temperature in the same way as in metals, i.e., reduced due to an increase in the number of collisions with the lattice ions, which vibrate with greater amplitude at a higher temperature.

Q. For a silicon base transistor, $V_{CE}$ must be sufficiently larger than