Q.
A semiconductor has equal electron and hole concentration of 2×108m−3. On doping with a certain impurity, the electron concentration increases to 4×1010m−3, then the new hole concentration of the semiconductor is
Electron concentration, ne=2×108m−3
Hole concentration, nh=2×108m−3
After doping with a impurity, the new electron concentration, ne′=4×1010m−3
New hole concentration, nh′=?
We know that, ne×nh=ni2
and ne′×nh′=ni2 ∴ne×nh=ne′×nh′ nh′=ne′ne×nh=4×10102×108×2×108/m3=106/m3 ⇒nh′=106m−3