Tardigrade
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Tardigrade
Question
Physics
A semiconductor has an electron concentration of 8 × 1013 per cm 3 and a hole concentration of 5 × 1012 per cm 3. The electron mobility is 25000 cm 2 V -1 s -1 and the hole mobility is 100 cm 2 V -1 s -1. Then,
Q. A semiconductor has an electron concentration of
8
×
1
0
13
per
c
m
3
and a hole concentration of
5
×
1
0
12
per
c
m
3
. The electron mobility is
25000
c
m
2
V
−
1
s
−
1
and the hole mobility is
100
c
m
2
V
−
1
s
−
1
. Then,
2382
238
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A
the semiconductor is
n
-type
B
the conductivity is
320
m
mh
o
c
m
−
1
C
Both (a) and (b)
D
None of the above
Solution:
n
e
=
8
×
1
0
13
/
c
m
3
,
n
n
=
5
×
1
0
12
/
c
m
3
μ
e
=
25000
c
m
2
V
−
1
s
−
1
μ
n
=
100
c
m
2
V
−
1
s
−
1
σ
=
n
e
μ
e
e
+
n
n
μ
n
e
=
(
8
×
1
0
13
×
25000
+
5
×
1
0
12
×
100
)
×
1.6
×
1
0
−
19
=
320
×
1
0
−
3
mh
o
/
c
m
n
e
>
n
n
(n-type)