Q.
A p - n photodiode is made of a material with a band gap of 2.0eV . The minimum frequency of the radiation that can be absorbed by the material is nearly
p−n photodiode is a semiconductor diode that produces a significant current when illuminated. It is reversed biased but is operated below the breakdown voltage.
Energy of radiation = band gap energy
ie, hv=2.0eV
or v=6.6×10−342.0×1.6×10−19 ≈5×1014Hz