A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV.It can detect a signal of wavelength

Question

A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV.It can detect a signal of wavelength (A) 6000 A° (B) 4000 nm (C) 6000 nm (D) 4000 A°

Tardigrade Admin · Accepted Answer

λ=(h c/E)=(12400 e v° A/2.5 e V) =4968° A

Q. A p-n photodiode is fabricated from a semiconductor with a band gap of $2.5 e V$ .It can detect a signal of wavelength

$6000 A^{\circ}$

$4000 nm$

$6000 nm$

$4000 A^{\circ}$

$λ = \frac{h c}{E} = \frac{12400 e v ^{\circ} A}{2.5 e V}$
$= 496 8^{\circ} A$

Q. A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5eV.It can detect a signal of wavelength

6000A∘

4000nm

6000nm

4000A∘