A certain p -n junction, having a depletion region of width 20 μ m, was found to have a breakdown voltage of 100 V. If the width of the depletion region is reduced to 1 μ m during its production, then it can be used as a zener diode for voltage regulation of

Question

A certain p -n junction, having a depletion region of width 20 μ m, was found to have a breakdown voltage of 100 V. If the width of the depletion region is reduced to 1 μ m during its production, then it can be used as a zener diode for voltage regulation of (A) 5 V (B) 10 V (C) 7.5 V (D) 2000 V

Tardigrade Admin · Accepted Answer

Breakdown occurs for a semiconductor at a particular value of field which is independent of amount of doping concentration.
Hence, breakdown field is same for both cases.
Now using,

E = \frac{d V}{d R},

we have

\frac{V _{1}}{d _{1}} = \frac{V _{2}}{d _{2}}

\Rightarrow \frac{100}{20} = \frac{V _{2}}{1}

\Rightarrow V_{2} = 5 V

Q. A certain p−n junction, having a depletion region of width 20μ m, was found to have a breakdown voltage of 100V. If the width of the depletion region is reduced to 1μ m during its production, then it can be used as a zener diode for voltage regulation of

5 V

10 V

7.5 V

2000 V

Breakdown occurs for a semiconductor at a particular value of field which is independent of amount of doping concentration. Hence, breakdown field is same for both cases. Now using, E=dRdV​,we have d1​V1​​=d2​V2​​ ⇒20100​=1V2​​ ⇒V2​=5V

Q. $A$ certain $p - n$ junction, having a depletion region of width $20 μ$ m, was found to have a breakdown voltage of $100 V .$ If the width of the depletion region is reduced to $1 μ$ m during its production, then it can be used as a zener diode for voltage regulation of