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  4. The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junctions are

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Q. The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon $p-n$ junctions are

NTA AbhyasNTA Abhyas 2022

Solution:

In the forward biased mode, we apply voltage in a direction opposite to that of barrier potential, that is, p-side to the positive terminal and n-side to the negative terminal of the battery. Thus, electrons in the n-side, holes in the p-side are pushed towards the junction which results in increased diffusion.
In reverse biased mode, we apply voltage in a direction of that of barrier potential. The electrons in n-side, holes in p-side pushed away from the junction that results in the drift current.