1. Tardigrade
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  3. Physics
  4. The current-voltage characteristic of an ideal p-n junction diode is given by i=i0(ee v / k T-1) where the drift current i 0 equal 10 μ A. Take the temperature T to be 300 K. Find the voltage V 0 for which ee V / K T=100. One can neglect the term 1 for voltages greater than this value

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Q. The current-voltage characteristic of an ideal p-n junction diode is given by $i=i_0\left(e^{e v / k T}-1\right)$
where the drift current $i _0$ equal $10\, \mu A$. Take the temperature $T$ to be $300\, K$.
Find the voltage $V _0$ for which $e^{e V / K T}=100$. One can neglect the term $1$ for voltages greater than this value

Semiconductor Electronics: Materials Devices and Simple Circuits

Solution:

Given $e^{e v / k T}=100$
or $ \frac{e v}{k T}=\ln 100$
$V=\frac{k T \ln 100}{e}$
$=\frac{1.38 \times 10^{-23} \times 300 \times \ln 100}{1.6 \times 10^{19}}=0.12 \,V$