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Q.
The breakdown in a reverse biased $p-n$ junction diode is more likely to occur due to
Semiconductor Electronics: Materials Devices and Simple Circuits
Solution:
In reverse biasing, the minority charge carriers will be accelerated due to reverse biasing, which on striking with atoms cause ionisation resulting in secondary electrons and thus produce more number of charge carriers. When doping concentration is large, there will be large number of ions in the depletion region, which will give rise to a strong electric field.