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  4. An extrinsic semiconductor with electrons as majority carriers can be obtained by doping Ge or Si with

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Q. An extrinsic semiconductor with electrons as majority carriers can be obtained by doping $ Ge $ or $ Si $ with

J & K CETJ & K CET 2017Semiconductor Electronics: Materials Devices and Simple Circuits

Solution:

Bismuth is the pentavalent impurity, hence it can be used as dopant to obtain $n$-type semiconductor