Which one of the following statement is false?

Question

Which one of the following statement is false? (A) Pure Si doped with trivalent impurities gives a p-type semiconductor. (B) Majority carriers in a n-type semiconductor are holes. (C) Minority carriers in a p-type semiconductor are electrons. (D) The resistance of intrinisic semiconductor decreases with increase of temperature.

Tardigrade Admin · Accepted Answer

In a n-type semiconductors, electrons are majority carriers and holes are minority carriers.

Q. Which one of the following statement is false?

Pure $S i$ doped with trivalent impurities gives a $p$ -type semiconductor.

Majority carriers in a $n$ -type semiconductor are holes.

Minority carriers in a $p$ -type semiconductor are electrons.

The resistance of intrinisic semiconductor decreases with increase of temperature.

In a $n$ -type semiconductors, electrons are majority carriers and holes are minority carriers.