Question

Which one of the following statement is false?

• A. Pure Si doped with trivalent impurities gives a p-type semiconductor
• B. Majority carriers in a n-type semiconductor are holes
• C. Minority carriers in a p-type semiconductor are electrons
• D. The resistance of intrinsic semiconductor decreases with increase of temperature

Answer 1

Answer: (A)

p-type semiconductor are obtained by adding a small amount of trivalent impurity to a pure sample of semiconductor (Ge). Majority charge carriers ? holes Minority charge carriers ___ electrons n-type semiconductor are obtained by adding a small amount of pentavalent impurity to a pure sample of semiconductor (Ge). Majority charge carriers?electrons The resistance of intrinsic semiconductors decreases with increase of temperature.