The different processes involved in the fabrication of an IC are: (i) Epitaxial growth of n or p− type layer, whenever desired. This involves cracking of silane. (ii) Oxidation which gives a layer insulating SiO2 and can be used to separate one region of the silicon chip from the other. (iii) Photolithography is a process in which different regions of silicon chip are photographically selected and etched so that different components can be fabricated in different regions. (iv) Diffusion of different impurities to obtain different device structure. (v) Metallisation involves deposition of metal films which inter-connect different components on a chip to obtain the circuit. Hence, option [a], is not involved in fabrication of IC.