The barrier potential of a p-n junction depends on (1) type of semiconductor material (2) amount of doping (3) temperature Which one of the following is correct?

Question

The barrier potential of a p-n junction depends on (1) type of semiconductor material (2) amount of doping (3) temperature Which one of the following is correct? (A) (1) and (2) only (B) (2) only (C) (2) and (3) only (D) (1), (2) and (3)

Tardigrade Admin · Accepted Answer

The barrier potential depends on type of semiconductor (For Si, Vb=0.7 V and for Ge , Vb=0.3 V ), amount of doping and also on the temperature.

Q. The barrier potential of a $p - n$ junction depends on
(1) type of semiconductor material
(2) amount of doping
(3) temperature
Which one of the following is correct?

(1) and (2) only

(2) only

(2) and (3) only

(1), (2) and (3)

The barrier potential depends on type of semiconductor (For Si, $V_{b} = 0.7 V$ and for $G e, V_{b} = 0.3 V$ ), amount of doping and also on the temperature.

Q. The barrier potential of a p−n junction depends on (1) type of semiconductor material (2) amount of doping (3) temperature Which one of the following is correct?