In a p-n junction diode, the thickness of deplection layer is 2 × 10-6 m and barrier potential is 0.3 V. The intensity of the electric field at the junction is

Question

In a p-n junction diode, the thickness of deplection layer is 2 × 10-6 m and barrier potential is 0.3 V. The intensity of the electric field at the junction is (A) 0.6 × 10-6 Vm -1 from n to p side (B) 0.6 × 10-6 Vm -1 from p to n side (C) 1.5 × 105 Vm -1 from n to p side (D) 1.5 × 105 Vm -1 from p to n side

Tardigrade Admin · Accepted Answer

Here, the barrier voltage, V=0.3 volt and the width of depletion layer, d=2 × 10-6 m ∴ Electric field at the junction, E =(V/d)=(0.3 V /2 × 10-6 m ) =1.5 × 105 V / m The direction of electric field is from n -type to p -type.

Q. In a $p - n$ junction diode, the thickness of deplection layer is $2 \times 1 0^{- 6} m$ and barrier potential is $0.3 V$ . The intensity of the electric field at the junction is

$0.6 \times 1 0^{- 6} V m^{- 1}$ from n to p side

$0.6 \times 1 0^{- 6} V m^{- 1}$ from p to n side

$1.5 \times 1 0^{5} V m^{- 1}$ from n to p side

$1.5 \times 1 0^{5} V m^{- 1}$ from p to n side

Here, the barrier voltage, $V = 0.3$ volt
and the width of depletion layer,
$d = 2 \times 1 0^{- 6} m$
$∴$ Electric field at the junction,
$E = \frac{V}{d} = \frac{0.3 V}{2 \times 1 0 ^{- 6} m}$
$= 1.5 \times 1 0^{5} V / m$
The direction of electric field is from $n$ -type to $p$ -type.

Q. In a p−n junction diode, the thickness of deplection layer is 2×10−6m and barrier potential is 0.3V. The intensity of the electric field at the junction is

0.6×10−6Vm−1 from n to p side

0.6×10−6Vm−1 from p to n side

1.5×105Vm−1 from n to p side

1.5×105Vm−1 from p to n side