Avalanche breakdown in a p-n junction diode is due to

Question

Avalanche breakdown in a p-n junction diode is due to (A) shift of Fermi level (B) widening of forbidden gap (C) high impurity concentration (D) cumulative effect of conduction band electrons collision

Tardigrade Admin · Accepted Answer

At a particular value of reverse bias voltage, the covalent bonds near the junction break, so electron-hole pairs get liberated, this process rapidly multiplies and an avalanche of electron-hole pairs is produced, so choice is correct.

Q. Avalanche breakdown in a p-n junction diode is due to

shift of Fermi level

widening of forbidden gap

high impurity concentration

cumulative effect of conduction band electrons collision

At a particular value of reverse bias voltage, the covalent bonds near the junction break, so electron-hole pairs get liberated, this process rapidly multiplies and an avalanche of electron-hole pairs is produced, so choice is correct.